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preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. january 2009 rev 1 1/12 12 STK24N4LLF5 n-channel 40 v, 0.0046 ? , 24 a, polarpak ? stripfet?v power mosfet features ultra low top and bottom junction to case thermal resistance r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) very low switching gate charge fully encapsulated die 100% matte tin finish (in compliance with the 2002/95/ec european directive) high avalanche ruggedness polarpak ? is a trademark of vishay application switching applications description this product utilizes the 5th generation of design rules of st?s proprietary stripfet? technology. the lowest available r ds(on) *q g , in this chip scale package, makes this device suitable for the most demanding dc-dc converter applications, where high power density is to be achieved. figure 1. internal schematic diagram type v dss r ds(on) max r ds(on) *q g STK24N4LLF5 40 v < 0.0055 ? 96 nc*m ? polarpak ? bottom view top view table 1. device summary order code marking package packaging STK24N4LLF5 244l5 polarpak ? tape and reel www.st.com
contents STK24N4LLF5 2/12 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STK24N4LLF5 electrical ratings 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 40 v v gs gate-source voltage 22 v i d (1) 1. when mounted on fr-4 board of 1inch 2 , 2 oz cu and 10sec drain current (continuous) at t c = 25 c 24 a i d drain current (continuous) at t c = 100 c 15.3 a i dm (2) 2. pulse width limited by package drain current (pulsed) 96 a p tot (1) total dissipation at t c = 25 c 5.2 w derating factor 0.0416 w/c e as (3) 3. starting t j = 25 c, i d = 12 a, v dd = 25 v single pulse avalanche energy tbd j t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter typ. max. unit rthj-amb (1) 1. when mounted on fr-4 board of 1inch 2 , 2 oz cu and 10sec thermal resistance junction-amb 20 24 c/w rthj-c (2) 2. steady state thermal resistance junction-case (top drain) 1 1.2 c/w rthj-c (3) 3. measured at source pin when the device is mounted on fr-4 board in steady state thermal resistance junction-case (source) 2.8 3.4 c/w
electrical characteristics STK24N4LLF5 4/12 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,tc=125c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 22 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 2.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 12 a v gs = 4.5 v, i d = 12 a 0.0046 0.0058 0.0055 0.0065 ? ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f=1 mhz, v gs =0 2350 335 50 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =15 v, i d = 24 a v gs =4.5 v (see figure 3 ) 20 tbd tbd nc nc nc r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20 mv open drain tbd ?
STK24N4LLF5 electrical characteristics 5/12 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15 v, i d = 12 a, r g =4.7 ?, v gs =4.5 v (see figure 2 ) tbd tbd ns ns t d(off) t f turn-off delay time fall time v dd =15 v, i d = 12 a, r g =4.7 ?, v gs =4.5 v (see figure 2 ) tbd tbd ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by package source-drain current source-drain current (pulsed) 24 96 a a v sd (2) 2. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 24 a, v gs =0 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 24 a, di/dt = 100 a/s, v dd =20 v, tj=150 c (se figure 7 ) tbd tbd tbd ns nc a
test circuits STK24N4LLF5 6/12 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive waveform figure 7. switching time waveform
STK24N4LLF5 test circuits 7/12 figure 8. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd
package mechanical data STK24N4LLF5 8/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack? packages, depending on their level of environmental compliance. ecopack? specifications, grade definitions and product status are available at: www.st.com. ecopack? is an st trademark.
STK24N4LLF5 package mechanical data 9/12 table 8. polarpak ? option ?s? mechanical data dim. mm min. typ. max. a0.750.800.85 a1 0.05 b1 0.48 0.58 0.68 b2 0.41 0.51 0.61 b3 2.19 2.29 2.39 b4 0.89 1.04 1.19 b5 0.23 0.33 0.43 c0.200.250.30 d 6 6.15 6.30 d1 5.74 5.89 6.04 e5.015.165.31 e1 4.75 4.90 5.05 h1 0.23 0.38 h2 0.45 0.51 0.56 h3 0.31 0.41 0.51 h4 0.45 0.51 0.56 k1 4.22 4.37 4.52 k2 1.08 1.13 1.18 k3 1.37 k4 0.24 m1 4.30 4.50 4.70 m2 3.43 3.58 3.73 m3 0.22 m4 0.05 p1 0.15 0.20 0.25 t1 3.48 3.64 4.10 t2 0.56 0.76 0.95 t3 1.20 t4 3.90 t5 0.18 0.36 < 0 10 12
package mechanical data STK24N4LLF5 10/12 figure 9. polarpak ? option ?s? drawing 7 8 76111_rev_d bottom view (10x) 1 2 3 4 5 67 8 910 d ss gd d ss gd h1 b 1 h2 b 2 h 3 b3 h4 b 1 b 5 b 4 p1 k1 k4 top view c s eating plane c 5 d 4 3 ss 21 gd 6 d 7 s 8 s 10 9 gd e1 e a1 a d1 d m2 m1 m4 m 3 t5 t4 t1 t 3 t2 (4x) < footprint recommended dimen s ion s in millimeter s 0.6 8 2. 3 9 0.61 0.6 8 5. 3 1 5.4 8 0.41 0. 3 1 0.41 d s gd
STK24N4LLF5 revision history 11/12 5 revision history table 9. document revision history date revision changes 19-jan-2009 1 first release
STK24N4LLF5 12/12 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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